Multi-quantum-well spin oscillator

doi:10.1063/1.2775812

2007-08-27

DOI：10.1063/1.2775812

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摘要

En 中文

A dc voltage biased II-VI semiconductor multi-quantum-well structure attached to normal contacts exhibits self-sustained spin polarized current oscillations if one or more of its wells are doped with Mn. Without magnetic impurities, the only configurations appearing in these structures are stationary. Analysis and numerical solution of a nonlinear spin transport model yield the minimal number of wells (four) and the ranges of doping density and spin splitting needed to find oscillations.(c) 2007 American Institute of Physics.

Keyword:

TUNNELING CURRENT

INJECTION

DYNAMICS

CHAOS

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期刊

Applied Physics Letters

IF:

3.6

论文数:

10.4W

被引数:

17.8W

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