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Multilayer indium saving ITO thin films produced by sputtering method
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DOI：10.1016/j.jallcom.2020.154378.png)
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摘要
En 中文
low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 mu Omega cm, mobility 28 cm(2)/V.s and carrier concentration 5.32 10(20) cm(-3). Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (S-a) and root mean square height (S-q) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively. (C) 2020 Elsevier B.V. All rights reserved.
Keyword:
Indium tin oxide
Direct current sputtering
Electrical properties
Optical properties
Surface roughness
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期刊
IF:
6.3
论文数:
8.4W
被引数:
24.3W
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