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Nonvolatile memory elements based on organic materials
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DOI：10.1002/adma.200602564.png)
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摘要
En 中文
Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge-voltage (capacitive) or current-voltage (resistive) response. A critical summary of the proposed charge-transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on-off ratio, on-state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.
Keyword:
FIELD-EFFECT TRANSISTOR
NEGATIVE-DIFFERENTIAL-RESISTANCE
SELF-ASSEMBLED MONOLAYERS
DATA-STORAGE APPLICATIONS
CHARGE-TRANSFER-COMPLEX
LIGHT-EMITTING-DIODES
RANDOM-ACCESS MEMORY
POLYMER THIN-FILMS
ELECTRICAL BISTABILITY
CONJUGATED COPOLYMER
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期刊
IF:
26.8
论文数:
3.4W
被引数:
46.0W
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