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Novel synaptic memory device for neuromorphic computing
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DOI：10.1038/srep05333.png)
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摘要
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This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO2 material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20 nm x 20 nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed similar to 10x reduction in area and >10(6) times reduction in the power consumption per learning cycle.
Keyword:
NEURONS
SYNAPSES
PLASTICITY
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期刊
IF:
3.9
论文数:
27.9W
被引数:
83.5W
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NANO LETTERS
NANO LETTERSIF9.1
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