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Novel Tellurium Oxide-Based Electronic Devices: Preparation, Characterization and Applications
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DOI：10.1002/adfm.202526894.png)
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Abstract
En 中文
With the deep integration of materials science and information technology, the field of electronic devices is undergoing unprecedented material and technological innovations. Tellurium oxide-based electronic devices, leveraging their unique multi-physics coupling characteristics, have emerged as a critical branch of novel functional material systems. Tellurium oxide exhibits excellent optical and electrical properties, demonstrating breakthrough application potential in transistors, memristors, broadband photodetectors, logic gates, and neuromorphic computing. This review systematically examines recent key advancements in tellurium oxide-based electronic devices across material preparation, crystal structure, bandgap engineering, and device applications. By establishing a “material-structure-performance” correlation map, the paper aims to provide researchers in related fields with a research framework that combines theoretical depth and technological foresight, accelerating the innovation of next-generation highly integrated, low-power electronic devices.
Keywords:
bandgap engineering
crystal structure
electronic applications
preparation
tellurium oxide
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19
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3.4W
Citations:
32.1W
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