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Optical interface phonon in thin layer inserted quantum well structure
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DOI：10.1088/0256-307X/13/10/015.png)
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The dependence of optical interface phonon on structure was demonstrated for thin layer inserted GaAlAs quantum well structures. It was found that the dispersion is sensitive to the Al-content of the inserted layer but almost independent of the position of the layer. The results showed that phonon modes can be modulated by adjusting the well parameters. which is useful for some device applications.
Keyword:
SEMICONDUCTOR HETEROSTRUCTURES
INTERSUBBAND TRANSITIONS
ELECTRON
SCATTERING
MODES
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