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Optical memcapacitor based on MoS2 quantum capacitance

delete2024-11-01
delete0
PRE
AI
W
Wei Guo
J
Jialu Li
Y
Yadong Qiao
C
Chenya Feng
姚
姚立 (Li Yao)
F
Fadi Wang
王
王宇航 (Yuhang Wang)
F
Fengping Wang *
DOI:10.1016/j.jallcom.2024.176016delete
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摘要

摘要

En 中文
It is imperative to study neuromorphic devices where the behavior of artificial synapses is regulated by external conditions. The quantum capacitance of 2D materials is determined by the local density of states near the Fermi level and usually exhibits a sensitive response to external stimuli. This study explores the use of MoS2 quantum capacitance in a memcapacitor (MoS2 quantum memcapacitor, MQM), emulating biological synapse behavior and showcasing higher sensitivity. Notably, without altering the physical structure, MQM realizes the potentiation and depression of capacitance through light and gas coupling manipulation, establishing a memory effect for the device. This enables MQM to reproduce the learning-forgetting cycle multiple times with good repeatability. Moreover, MQM can simulate various biological synaptic behaviors, encompassing short-term memory to long-term memory conversions, short-term depression to long-term depression conversions, and higher pairpulse-facilitation behavior. These characteristics offer a fresh direction and possibilities for artificial synaptic device research.
Keyword:
Memcapacitor
Quantum capacitance
Artificial synapse
MoS2

期刊

Journal of Alloys and Compounds 封面图
Journal of Alloys and Compounds
IF:
6.3
论文数:
8.4W
被引数:
24.3W

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