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Optical Multilevel Spin Bit Device Using Chiral Quantum Dots
DOI:10.1021/acs.nanolett.0c03445.png)
摘要
En 中文
The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.
Keyword:
chiral induced spin selectivity (CISS)
multistate memory
spin transfer
spintronics
optical nano device
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期刊
IF:
9.1
论文数:
2.7W
被引数:
16.5W
机构
引用论文
Angular momentum transfer from photon polarization to an electron spin in a gate-defined quantum dot
NATURE COMMUNICATIONS
IF15.7
Highly Distorted Chiral Two-Dimensional Tin Iodide Perovskites for Spin Polarized Charge Transport用于自旋极化电荷传输的高度扭曲的手性二维碘化锡钙钛矿

