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Optical switch based on vanadium dioxide thin films
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DOI：10.1016/j.infrared.2003.11.005.png)
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摘要
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In this letter, novel optical switches based on VO2 thin film on substrates of silicon (10 0) has been fabricated. The vanadium dioxide thin films were deposited by reactive ion beam sputtering followed by a post-annealing. Testing shows the insertion loss of the optical switches is 1-2 dB, and the extinction ratio up to 26 dB. The speed of the switches is as fast as 3 ms. (C) 2003 Elsevier B.V. All rights reserved.
Keyword:
optical switches
vanadium dioxide thin films
reactive ion sputtering
extinction ratio
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