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Optically Programmable Antisymmetric Longitudinal Resistance Enabled by Local Domain Asymmetry
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Y
J
Z
J
J
B
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DOI：10.1021/acs.nanolett.6c01628.png)
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Abstract
En 中文
Antisymmetric longitudinal resistance (ALR) is a striking transport anomaly in perpendicularly magnetized multilayers, but its microscopic origin remains under debate. Here, we demonstrate that ALR originates from an anomalous Hall effect-induced local potential difference created by the asymmetric distribution of magnetic domains in the current–voltage intersection region. Combining multiprobe transport measurements with in situ magneto-optical Kerr imaging, we establish a direct correlation between ALR and the domain distribution in Pt/Co multilayers. We use a femtosecond laser to precisely write magnetic domains with different area fractions, thereby demonstrating that the ALR amplitude is determined by the area fraction of reversed domains within the current–voltage intersection region. Moreover, by suppressing interlayer spin-coherent transport in a spin-valve structure, we achieve a layer-resolved ALR response. Our findings clarify the microscopic origin of ALR and reveal its potential for multilevel memory and three-dimensional spintronic architectures.
Keywords:
Magnetic domain configuration
Magnetoresistance
Spintronic devices
Multilevel memory devices
Helicity-dependent all-optical switching
Journal
IF:
9.1
Papers:
2.7W
Citations:
16.5W
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Cited Papers