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Oxide unlocking electron beam melting to separate boron for impurities co-removal of metallurgical grade silicon
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PRE
AI
高
谭
W
Z
李
DOI：10.1016/j.seppur.2023.124615.png)
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Abstract
En 中文
Removing stubborn B from Si efficiently and simplifying the purification process are critical challenges that must be addressed in the manufacture of solar grade silicon (SoG-Si) via metallurgical routes. Herein, B is flexibly coupled with other impurities separation procedure, so that metallurgical grade silicon (MG-Si) is purified through simplified electron beam melting (EBM) unlocked by a few oxides (0.1 wt%). EBM fulfills three functions including promotion of oxidation, evaporation of impurities, and induction of directional solidification, giving high-temperature field, high vacuum field, and intense melt convection, which not only ensures the smooth process of B oxidation but also favors the co-removal of other impurities, obtaining high purity Si. As a result, purified Si ingot exhibits a low content of B (from 12.76 ppmw to 2.92 ppmw), and the total content of major impurities is reduced from 1217.24 ppmw to 5.66 ppmw. Significantly, pure SiO2 could more readily access the high-temperature region of Si melt during EBM, offering distinct advantages for the oxidation gas phase separation of B. This work provides an efficient and robust method for expanding ideas of B removal and simplifying metallurgical routes.
Keywords:
Electron beam melting
Silicon
Boron removal
Oxidation
Purification
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9
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2.9W
Citations:
12.1W
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