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Oxygen Vacancy Passivation by Compensation Technique to Address the Conflict Between Mobility and Threshold Voltage of Heterojunction Oxide Transistors
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DOI：10.1002/sstr.70564.png)
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Abstract
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Oxide transistors have attracted considerable attention in integrated circuits and practical applications, yet they face the fundamental conflict between field-effect mobility (μFE) and threshold voltage (Vth). In this study, we propose a compensation technique that can effectively passivate oxygen vacancies and enhance the gate control capability of devices, achieving a balance between the μFE and Vth of InZnO/ZnO heterojunction transistors. After treating the back-channel region with 0.05 mol L−1–NH4Cl solution for 30 s, Vth exhibits a positive shift from −1.51 to −0.75 V, accompanied by a reduction in subthreshold swing (SS) from 246.50 to 96.90 mV dec−1. The μFE remains at a high level from 71.63 to 70.60 cm2 V−1 s−1. Ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) analyses reveal that this method reduces the oxygen vacancy on the channel surface. Density functional theory (DFT) reveals that OH groups from the solution passivate oxygen vacancies via Zn–H–Zn bridges intermediate, forming Zn–OH as the final product at room temperature. Inverters based on treated InZnO/ZnO transistors were fabricated, exhibiting a fivefold enhancement in gain from 90 to 450 V/V. This electrical compensation strategy features low-temperature operation, low power consumption, and large-area processability, demonstrating great potential for back-end-of-line integration applications.
Keywords:
mobility
oxygen vacancy
passivation
solution treatment
threshold voltage
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