.png){kind=icon}
返回
P-Type 2D Semiconductors for Future Electronics
.png){kind=icon}
PRE
AI
DOI：10.1002/adma.202206939.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
Keyword:
2D semiconductors
electronics
integrated circuit
post-Moore era
p-type
期刊
IF:
26.8
论文数:
3.4W
被引数:
46.0W
机构
引用论文
Movements and post-release mortality of juvenile sea turtles released from gillnets in the lower Cape Fear River, North Carolina, USA从美国北卡罗来纳州下开普恐惧河刺网释放的幼年海龟的运动和释放后死亡率
OAAI
OAAI分享收藏Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers用于掺杂和合金化过渡金属二硫族化合物单层的可控薄膜方法.png)
ADVANCED SCIENCEOAAI
ADVANCED SCIENCEIF14.1
OAAI分享收藏2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices2D层状材料合金: 合成及其在电子和光电器件中的应用ADVANCED SCIENCEOAAI
ADVANCED SCIENCEIF14.1
OAAI分享收藏Evaporated tellurium thin films for p-type field-effect transistors and circuits用于p型场效应晶体管和电路的蒸发碲薄膜NATURE NANOTECHNOLOGY
NATURE NANOTECHNOLOGYIF34.9
PREAI
分享收藏Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties黑色砷磷: 具有高度可调组成和性质的层状各向异性红外半导体ADVANCED MATERIALS
OAAI
ADVANCED MATERIALSIF26.8
OAAI分享收藏p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices用于电子和光电子器件的2D过渡金属二硫族化合物的p/n型调制
PREAI
分享收藏Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layersp型WSe2原子层的大面积生长及电学性质研究NANO LETTERSOAAI
NANO LETTERSIF9.1
OAAI分享收藏
查看更多内容