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Paraffin-enabled graphene transfer
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DOI：10.1038/s41467-019-08813-x.png)
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摘要
En 中文
The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with similar to 1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm(2) V-1 s(-1); electron mobility = 7438 cm(2) V-1 s(-1)), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.
Keyword:
SINGLE-CRYSTAL GRAPHENE
LAYER GRAPHENE
HIGH-QUALITY
WAFER-SCALE
LARGE-AREA
FILMS
MECHANISM
CONTACT
GROWTH
OXYGEN
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期刊
IF:
15.7
论文数:
9.4W
被引数:
91.2W
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