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Passively modelocked surface-emitting semiconductor lasers
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DOI：10.1016/j.physrep.2006.03.004.png)
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This paper will review and discuss pico- and femtosecond pulse generation from passively modelocked vertical-external-cavity surface-emitting semiconductor lasers (VECSELs). We shall discuss the physical principles of ultrashort pulse generation in these lasers, considering in turn the role played by the semiconductor quantum well gain structure, and the saturable absorber. The paper will analyze the fundamental performance limits of these devices, and review the results that have been demonstrated to date. Different types of semiconductor saturable absorber mirror (SESAM) design, and their characteristic dynamics, are described in detail; exploring the ultimate goal of moving to a wafer integration approach, in which the SESAM is integrated into the VECSEL structure with tremendous gain in capability. In particular, the contrast between VECSELs and diode-pumped solid-state lasers and edge-emitting diode lasers will be discussed. Optically pumped VECSELs have led to an improvement by more than two orders of magnitude to date in the average output power achievable from a passively modelocked ultrafast semiconductor laser. (c) 2006 Published by Elsevier B.V.
Keyword:
passive modelocking
semiconductor laser
saturable absorber
nonlinear propagation
nonlinear semiconductor dynamics
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