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Performance optimization in ZrOx-based RRAM devices with current modulation layer
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DOI：10.1007/s10825-026-02539-y.png)
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Abstract
En 中文
Resistive random access memories (RRAMs) have unique switching characteristics and promising applications in large-scale memory storage and neural networks. In this study, a Ti/ZrO2/ZrOx/Pt RRAM structure was constructed, and a current modulation layer (CML) was inserted to improve the forming process. Simulation results show that the device with CML(CML/Ti/ZrO2/ZrOx/Pt) has almost no interference from electric field or thermal effects, and the forming processes of the conductive filaments (CFs) can be controlled by varying the compliance current, which effectively prevents the generation of overshoot current, leading to improved switching characteristics. Additionally, multilevel storage capability can be realized by regulating the compliance current during reset operations, which demonstrates the applications in the field of low-power and high-density storage.
Keywords:
Resistive random access memory
Current modulation layer
Forming process
Compliance current
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