Phase-Change Memory for In-Memory Computing

Syed Ghazi Sarwat

doi:10.1021/acs.chemrev.4c00670

2025-05-22

Syed Ghazi Sarwat *

Manuel Le Gallo

DOI：10.1021/acs.chemrev.4c00670

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摘要

En 中文

内存计算（IMC）是一种新兴的计算方法，用于解决现代计算系统中的处理器-内存瓶颈问题。其核心概念是利用存储器件的物理特性和其在阵列级的组织结构，直接在存储阵列内执行计算。相变存储器（PCM）是一种被用于内存计算探索的前沿存储技术。从这一视角出发，我们回顾了当前相变材料的研究现状、PCM器件物理机制，以及基于PCM的内存计算芯片的设计与制造工艺。此外，我们还概述了其应用前景，并对未来发展趋势提供了见解。

Keyword:

THIN-FILMS

RESISTANCE

GE2SB2TE5

NONVOLATILE

MEMRISTOR

CRYSTALLIZATION

RECOGNITION

PLASTICITY

GRAPHENE

MODEL

期刊

Chemical Reviews

IF:

55.8

论文数:

573

被引数:

24.7W

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