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Phase change memory materials and their applications
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AI
DOI：10.1070/RCR5033.png)
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摘要
En 中文
Over the past 30 years, phase change memory materials based on chalcogenide semiconductors have rapidly developed from laboratory prototypes to materials extensively used as functional layers in various devices. First of all, this concerns compounds of the Ge-Sb-Te system, which can be reasonably considered as full-fledged functional materials. The review presents a current view of the control of properties of phase change memory materials by their chemical and structural modification. Both the existing and prospective applications of these materials are highlighted. The discussion of chemical modification focuses on popular dopants such as bismuth, tin, oxygen and nitrogen and also refractory metals. In the discussion of structural modification, the use of laser radiation is considered in detail. Currently, this is a key trend in increasing the operation speed of devices based on phase change memory materials. Data on the formation of periodic surface structures in these materials are highlighted and it is emphasized that this effect could find application in nanophotonics and optoelectronics in the near future. The bibliography includes 336 references.
Keyword:
GE-SB-TE
DOPED GE2SB2TE5 FILMS
PERIODIC SURFACE-STRUCTURES
LASER-INDUCED MODIFICATION
THIN-FILMS
AMORPHOUS GE2SB2TE5
CRYSTALLIZATION BEHAVIOR
OPTICAL-PROPERTIES
CHALCOGENIDE GLASSES
MECHANICAL STRESSES
期刊
IF:
6
论文数:
795
被引数:
4.5K
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