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Polysilicon nanofilm pressure sensor
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DOI：10.1016/j.sna.2009.07.015.png)
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Utilizing 80 nm polysilicon nanofilm as piezoresistors, a pressure sensor with high performance is developed. The complete fabrication process is described. The pressure properties of the sensor were measured at the temperature from 0 to 200 degrees C. For 0.6 MPa full scale pressure, the sensitivity is 23.00 mV/V/MPa at 0 degrees C and 18.27 mV/V/MPa at 200 degrees C, the temperature coefficient of sensitivity (TCS) is about -0.098%/degrees C without any compensation. The temperature coefficient of offset (TCO) is about -0.017%/degrees C. Because of the good piezoresistive and temperature characteristics of polysilicon nanofilm, the pressure sensor demonstrates a better performance. (C) 2009 Elsevier B.V. All rights reserved.
Keyword:
Pressure sensor
Polysilicon nanofilm
Piezoresistive property
Temperature characteristic
MEMS
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4.9
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1.6W
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3.3W
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