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Polysilicon process development for fully integrated surface-micromachined accelerometer with CMOS electronics
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DOI：10.1016/S0924-4247(97)01782-2.png)
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摘要
En 中文
In this paper we shall discuss the required polysilicon characteristics to produce foe-standing mechanical structures such as accelerometers, Protection of the metallization and electronics during the removal of the sacrificial oxide will be discussed dong with drying techniques. A process for producing mechanical structures with active CMOS transistors will be presented along with a prototype accelerometer. Tumble-test results for the accelerometer show that even with external, off-chip electronics, these devices can easily distinguish +/- 1g. Capacitance-voltage (CV) curves for the accelerometers are shown as a quick way of checking these devices using standard integrated-circuit test instruments. Analysis of the current-voltage (IV) characteristics of both the n-channel and p-channel transistors shows that the additional processing has no effect on the threshold voltage but does significantly increase the channel shortening. Crown Copyright (C) 1998 Published by Elsevier Science S.A.
Keyword:
surface micromachining
polysilicon
accelerometers
CMOS
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4.9
论文数:
1.5W
被引数:
3.3W
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