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Pressure-enhanced superconductivity in intermediately sulfur-doped FeSe1−xSx (x = 0.31−0.62) single crystals
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DOI：10.1088/1361-6668/ae55d8.png)
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Abstract
En 中文
We report systematic high-pressure resistivity measurements on sulfur-doped FeSe1−xSx (x = 0.31, 0.45, 0.62) single crystals synthesized via a hydrothermal ion-release method. The superconducting transition temperature Tc exhibits a two-stage pressure dependence in the intermediate S concentrations, with a slight suppression at low pressures followed by a rapid enhancement. Correspondingly, the onset Tc reaches 23.0 K for x = 0.31, 18.1 K for x = 0.45, and 9.6 K for x = 0.62 at the highest applied pressures, exceeding their respective ambient-pressure values. This substantial enhancement in the intermediate doping regime contrasts sharply with the monotonically suppressed superconductivity in FeS. Concomitantly, the low-temperature resistivity upturn characterized by T* shows a sensitive pressure dependence, pointing to an instability that may compete with superconductivity. By compiling data across the whole substitution range (x = 0 − 1), we establish a comprehensive Tc − P phase diagram. The observed evolution suggests a crossover from strongly correlated FeSe to the more weakly correlated FeS limit. Our results are consistent with a scenario in which pressure modifies the electronic structure and low-energy scattering, thereby influencing the superconducting enhancement in the intermediate S compositions.
Keywords:
superconductivity
sulfur doping
FeSe1−xSx
high pressure
resistivity
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4.2
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8.3K
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