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Probing vacancy behavior across complex oxide heterointerfaces
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DOI：10.1126/sciadv.aau8467.png)
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摘要
En 中文
Oxygen vacancies (V-(o)over dot) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO3 (Nb:SrTiO3) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using (T= 500 degrees C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate.
Keyword:
STRONTIUM-TITANATE
DEFECT CHEMISTRY
THIN-FILMS
INTERFACES
DIFFUSION
TRANSPORT
SRTIO3
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IF:
12.5
论文数:
2.1W
被引数:
18.1W
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Unraveling the enhanced Oxygen Vacancy Formation in Complex Oxides during Annealing and Growth.png)
SCIENTIFIC REPORTSOAAI
SCIENTIFIC REPORTSIF3.9
OAAI分享收藏Behavior of oxygen vacancies in single-crystal SrTiO3: Equilibrium distribution and diffusion kineticsPHYSICAL REVIEW B
PHYSICAL REVIEW BIF3.7
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