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PtCoO2 for Scaled Interconnects

delete2025-03-27
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OA
AI
李岩松 封面图
李岩松 (Yansong Li)
周
周光明 (Guanyu Zhou)
M
Michelle M. Kelley
S
Sadiq Shahriyar Nishat
S
Sara Bey
M
Muhsin Abdul Karim
X
Xinyu Liu
B
Badih A. Assaf
D
Daniel Gall
DOI：10.1002/sstr.202400638delete
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摘要

摘要

En 中文
铜（Cu）互连线在集成电路中是一个日益重要的瓶颈，这是由于尺寸减小时铜电阻率的显著增加所导致的能耗和延迟问题，主要原因在于表面电子散射。在此，展示了方向性导体PtCoO2的潜力，该材料具有较低的体电阻率和独特的各向异性结构，能够减轻电子表面散射。通过分子束外延（MBE）结合后沉积退火工艺合成了不同厚度的PtCoO2薄膜，并通过多种表征技术证明了PtCoO2薄膜的优异质量。厚度依赖的电阻率曲线表明，在低于20.0 nm的厚度下，PtCoO2在电阻率方面显著优于有效Cu（带有TaN势垒的Cu）和Ru，在低于6.0 nm的厚度下，与有效Cu相比电阻率降低了6倍以上，在3.3 nm厚度时电阻率仅为6.32 μΩ·cm。通过实验和理论模拟的结合确定，在此材料体系中，通过进一步改善晶界散射，可以获得更低的电阻率。因此，PtCoO2是未来互连技术中极具潜力的替代材料，有望实现更低的电阻率、更好的稳定性，并显著提高先进集成电路的能量效率和延迟性能。
Keyword:
anisotropic transport
delafossite oxide
electron scattering
interconnects
low resistivity
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期刊

Small Structures 封面图
Small Structures
IF:
11.3
论文数:
1.6K
被引数:
6.8K

机构

U
University of Notre Dame
学者数:
1.2W
论文数: 1.1W
被引数: 1.7W
R
rensselaer polytechnic institute
学者数:
7.0K
论文数: 6.5K
被引数: 6
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