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Quantum diffusion and localization in disordered electronic systems
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DOI：10.1103/PhysRevB.78.035102.png)
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摘要
En 中文
The diffusion of electronic wave packets in one-dimensional systems with on-site, binary disorder is numerically investigated within the framework of a single-band tight-binding model. Fractal properties are incorporated by assuming that the distribution of distances l between consecutive impurities obeys a power law, P(l)similar to l(-alpha). For suitable ranges of alpha, one finds system-wide anomalous diffusion. Asymmetric diffusion effects are introduced through the application of an external electric field, leading to results similar to those observed in the case of photogenerated electron-hole plasmas in tilted InP/InGaAs/InP quantum wells.
Keyword:
FRACTAL RENEWAL PROCESSES
ABSENCE
TRANSPORT
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期刊
IF:
3.7
论文数:
15.4W
被引数:
41.0W
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