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Quantum logic gates

delete2019-02-01
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PRE
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А
А. А. Горбацевич *
Н
Н. М. Шубин
DOI:10.3367/UFNe.2017.12.038310delete
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摘要

摘要

En 中文
We discuss the strategies to construct logic gates based on solid-state and molecular structures in which information transformation processes are governed by quantum mechanical principles and which, similarly to the classical complementary metal-oxide-semiconductor (CMOS) structures, do not consume power in the stationary state. In the first-generation quantum analogs of CMOS gates, logical state switching occurs by fast quantum mechanical tunneling processes, but the transfer characteristics are determined by classical diffusion-drift carrier transport. The second-generation quantum analogs of CMOS systems are open quantum systems in which charge carrier transport occurs coherently. The development of atomic-precision lithography will allow wide use of quantum molecular logic gates in traditional computer architectures.
Keyword:
quantum transport
resonant tunneling
quantum interference
non-Hermitian Hamiltonian
PT symmetry
exceptional point
coalescence of resonances
logic gate
complementary metal-oxide-semiconductor (CMOS) transistor
quantum inverter
switching voltage
transfer characteristics
nanoelectronics
molecular electronics
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期刊

P
Physics-Uspekhi
IF:
3.4
论文数:
2.3K
被引数:
6.1K

机构

R
russian academy of sciences
学者数:
9.1W
论文数: 6.0W
被引数: 60
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