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摘要
En 中文
We discuss the strategies to construct logic gates based on solid-state and molecular structures in which information transformation processes are governed by quantum mechanical principles and which, similarly to the classical complementary metal-oxide-semiconductor (CMOS) structures, do not consume power in the stationary state. In the first-generation quantum analogs of CMOS gates, logical state switching occurs by fast quantum mechanical tunneling processes, but the transfer characteristics are determined by classical diffusion-drift carrier transport. The second-generation quantum analogs of CMOS systems are open quantum systems in which charge carrier transport occurs coherently. The development of atomic-precision lithography will allow wide use of quantum molecular logic gates in traditional computer architectures.
Keyword:
quantum transport
resonant tunneling
quantum interference
non-Hermitian Hamiltonian
PT symmetry
exceptional point
coalescence of resonances
logic gate
complementary metal-oxide-semiconductor (CMOS) transistor
quantum inverter
switching voltage
transfer characteristics
nanoelectronics
molecular electronics
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期刊
P
IF:
3.4
论文数:
2.3K
被引数:
6.1K
机构
引用论文
Superradiance transition in one-dimensional nanostructures: An effective non-Hermitian Hamiltonian formalism一维纳米结构中的超辐射跃迁: 有效的非埃尔米特哈密顿形式主义
PHYSICAL REVIEW B
IF3.7

