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Oscillations have been observed for the first time from double barrier resonant tunneling structures. By eliminating impurities from the wells, we have been able to increase the tunneling current density by a factor of nearly 100. With the attendant increase in gain and improved impedance match to the resonant circuit, the devices oscillated readily in the negative resistance region. Oscillator output power of 5 μW and frequencies up to 18 GHz have been achieved with a dc to rf efficiency of 2.4% at temperatures as high as 200 K. It is shown that higher frequencies and higher powers can be expected.
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