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Quasi-Solid-State Single-Atom Transistors

delete2018-06-21
delete11
PRE
AI
F
Fangqing Xie
P
Peukert, Andreas
B
Bender, Thorsten
O
Obermair, Christian
W
Wertz, Florian
S
Schmieder, Philipp
T
Thomas Schimmel *
DOI:10.1002/adma.201801225delete
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摘要

摘要

En 中文
The single-atom transistor represents a quantum electronic device at room temperature, allowing the switching of an electric current by the controlled and reversible relocation of one single atom within a metallic quantum point contact. So far, the device operates by applying a small voltage to a control electrode or gate within the aqueous electrolyte. Here, the operation of the atomic device in the quasi-solid state is demonstrated. Gelation of pyrogenic silica transforms the electrolyte into the quasi-solid state, exhibiting the cohesive properties of a solid and the diffusive properties of a liquid, preventing the leakage problem and avoiding the handling of a liquid system. The electrolyte is characterized by cyclic voltammetry, conductivity measurements, and rotation viscometry. Thus, a first demonstration of the single-atom transistor operating in the quasi-solid-state is given. The silver single-atom and atomic-scale transistors in the quasi-solid-state allow bistable switching between zero and quantized conductance levels, which are integer multiples of the conductance quantum G(0) = 2e(2)/h. Source-drain currents ranging from 1 to 8 mu A are applied in these experiments. Any obvious influence of the gelation of the aqueous electrolyte on the electron transport within the quantum point contact is not observed.
Keyword:
atomic-scale electronics
nano-electromechanical systems
nanotechnology
quantum technologies
single-atom transistors
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Advanced Materials 封面图
Advanced Materials
IF:
26.8
论文数:
3.5W
被引数:
46.0W

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H
Helmholtz Association
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