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Radiation-resistant binary solid solutions via vacancy trapping on solute clusters

delete2021-12-01
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PRE
AI
C
Craig Daniels *
P
Pascal Bellon
R
R. S. Averback
DOI:10.1016/j.mtla.2021.101261delete
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摘要

摘要

En 中文
Additions of solute that trap vacancies slow down vacancy diffusion and promote point-defect recombination in alloys subjected to irradiation. Such selective alloying can thus help to minimize the detrimental consequences resulting from point defect fluxes. The current work investigates the effect of solute additions on the recombination rate using kinetic Monte Carlo simulations for a model alloy system, which was parametrized to Cu-Ag in the dilute limit, but with an increased solubility limit, approximate to 0.86 at.% at 300 K. As the solute concentration was increased above 0.1 at.%, solute clustering was observed and led to a strong increase in recombination rate. The beneficial effects of solute clustering on reducing vacancy mobility, and reducing solute drag, were analyzed by calculating relevant transport coefficients using the KineCluE code (Schuler et al., Computational Materials Science (2020) 172,109,191). Moreover, it was observed in the KMC simulations that large recombination rates resulted in a shift of steady-state distributions of solute cluster sizes to smaller clusters compared to equilibrium distributions in the solid solution. This shift is rationalized as resulting from the irreversible character of the interstitial-vacancy recombination reaction. These results suggest a novel irradiation effect on phase stability where a high recombination rate increases the solubility limit of a solute at steady state over its equilibrium value.
Keyword:
Irradiation
Solute-defect trapping
KMC
Cluster transport

期刊

Materialia 封面图
Materialia
IF:
2.9
论文数:
2.3K
被引数:
6.5K

机构

University of Illinois System 封面图
University of Illinois System
学者数:
6.9W
论文数: 6.2W
被引数: 644
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