Reactive diffusion between Pd and Sn at solid-state temperatures

Takenaka, Takeshi

doi:10.1016/j.msea.2005.06.054

Reactive diffusion between Pd and Sn at solid-state temperatures

2005-10-01

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DOI：10.1016/j.msea.2005.06.054

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The kinetics of the reactive diffusion between Pd and Sn at solid-state temperatures was experimentally examined using Sn/Pd/Sn diffusion couples prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed at temperatures of T=433, 453 and 473 K for various times up to 300 h in an oil bath with silicone oil. After annealing, PdSn4, PdSn3 and PdSn2 compound layers were observed at T=433 K, but only PdSn4 and PdSn3 layers were recognized at T=453 and 473 K. The total thickness I of the Pd-Sn compound layers is mathematically described as a power function of the annealing time t as follows: l=k(t/t(0))(n), where to is unit time, I s. The diameter d of the columnar grain in the compound layers is also expressed as a power function of the annealing time t: d=k(d)(t/t(0))(p). At T=433-473 K, n is close to 0.5, and p takes values of 0.14-0.17. Such values of p indicate that the grain growth occurs at certain rates in the compound layers. Nevertheless, the total thickness 1 is almost proportional to the square root of the annealing time t. Thus, it is concluded that the volume diffusion is the rate-controlling process of the reactive diffusion between Pd and Sn. (c) 2005 Elsevier B.V. All rights reserved.

Keywords:

diffusion bonding

EPMA

intermetallic compounds

bulk diffusion

solder

Reactive diffusion between Pd and Sn at solid-state temperatures

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