.png){kind=icon}
返回
Recent Developments in p-Type Oxide Semiconductor Materials and Devices
.png){kind=icon}
OA
AI
DOI：10.1002/adma.201503080.png)
.png){kind=icon}
.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.
Keyword:
THIN-FILM TRANSISTORS
BIAS STRESS STABILITY
ROOM-TEMPERATURE FABRICATION
CHEMICAL-VAPOR-DEPOSITION
ATOMIC LAYER DEPOSITION
NARROW ENERGY-BANDS
NICKEL-OXIDE
OPTICAL-PROPERTIES
ELECTRICAL-PROPERTIES
ELECTRONIC-STRUCTURE
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
26.8
论文数:
3.5W
被引数:
46.0W
机构
引用论文
.png){kind=icon}
分享收藏Electroreductive cleavage of propargylic acetates through polarity inversion of in situ generated allenyl palladium(II) complexes and, in part, unusual chemical reduction induced by phosphine ligand通过 原位 生成的丙二烯基钯 (II) 配合物的极性反转，以及部分地由膦配体诱导的异常化学还原，丙炔乙酸酯的电还原裂解
PREAI
分享收藏Das Humanpotenzial einer taktunabhängigen MontageDas Humanpotenzial einer taktunabh ä ngigen蒙太奇
PREAI
分享收藏
查看更多内容