.png){kind=icon}
返回
Resistive switching materials for information processing
.png){kind=icon}
PRE
AI
DOI：10.1038/s41578-019-0159-3.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
Resistive switching materials enable novel, in-memory information processing, which may resolve the von Neumann bottleneck. This Review focuses on how the switching mechanisms and the resultant electrical properties lead to various computing applications. The rapid increase in information in the big-data era calls for changes to information-processing paradigms, which, in turn, demand new circuit-building blocks to overcome the decreasing cost-effectiveness of transistor scaling and the intrinsic inefficiency of using transistors in non-von Neumann computing architectures. Accordingly, resistive switching materials (RSMs) based on different physical principles have emerged for memories that could enable energy-efficient and area-efficient in-memory computing. In this Review, we survey the four physical mechanisms that lead to such resistive switching: redox reactions, phase transitions, spin-polarized tunnelling and ferroelectric polarization. We discuss how these mechanisms equip RSMs with desirable properties for representation capability, switching speed and energy, reliability and device density. These properties are the key enablers of processing-in-memory platforms, with applications ranging from neuromorphic computing and general-purpose memcomputing to cybersecurity. Finally, we examine the device requirements for such systems based on RSMs and provide suggestions to address challenges in materials engineering, device optimization, system integration and algorithm design.
Keyword:
PHASE-CHANGE MATERIALS
RANDOM-ACCESS-MEMORY
SPIN-ORBIT TORQUE
REAL-TIME OBSERVATION
DOMAIN-WALLS
ROOM-TEMPERATURE
IN-MEMORY
PERPENDICULAR MAGNETIZATION
LOGIC OPERATIONS
CROSSBAR ARRAY
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
86.2
论文数:
1.2K
被引数:
4.3W
机构
引用论文
High-performance ferroelectric memory based on fully patterned tunnel junctions基于全图案化隧道结的高性能铁电存储器
OAAI
OAAI分享收藏Designing crystallization in phase-change materials for universal memory and neuro-inspired computing在相变材料中设计结晶以实现通用存储和神经启发计算.png)
NATURE REVIEWS MATERIALS
NATURE REVIEWS MATERIALSIF86.2
PREAI
分享收藏Resistive Random Access Memory (ReRAM) Based on Metal Oxides基于金属氧化物的电阻式随机存取存储器 (ReRAM)PROCEEDINGS OF THE IEEE
PROCEEDINGS OF THE IEEEIF25.9
PREAI
分享收藏Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale CircuitsADVANCED MATERIALS
ADVANCED MATERIALSIF26.8
PREAI
分享收藏Density-functional theory guided advances in phase-change materials and memoriesMRS BULLETIN
MRS BULLETINIF4.9
PREAI
分享收藏Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimensionNATURE NANOTECHNOLOGY
NATURE NANOTECHNOLOGYIF34.9
PREAI
分享收藏分享收藏
查看更多内容