返回
Robust Gaussian Process Regression Method for Efficient Tunneling Pathway Optimization: Application to Surface Processes
DOI:10.1021/acs.jctc.4c00158.png)
摘要
En 中文
Simulation of surface processes is a key part of computational chemistry that offers atomic-scale insights into mechanisms of heterogeneous catalysis, diffusion dynamics, and quantum tunneling phenomena. The most common theoretical approaches involve optimization of reaction pathways, including semiclassical tunneling pathways (called instantons). The computational effort can be demanding, especially for instanton optimizations with an ab initio electronic structure. Recently, machine learning has been applied to accelerate reaction-pathway optimization, showing great potential for a wide range of applications. However, previous methods still suffer from numerical and efficiency issues and were not designed for condensed-phase reactions. We propose an improved framework based on Gaussian process regression for general transformed coordinates, which has improved efficiency and numerical stability, and we propose a descriptor that combines internal and Cartesian coordinates suitable for modeling surface processes. We demonstrate with 11 instanton optimizations in three representative systems that the improved approach makes ab initio instanton optimization significantly cheaper, such that it becomes not much more expensive than a classical transition-state theory rate calculation.
Keyword:
INITIO MOLECULAR-DYNAMICS
FINDING SADDLE-POINTS
GEOMETRY OPTIMIZATION
TRANSITION
SIMULATION
MATRIX
WATER
AI总结
对已上传原文的论文进行重点信息的提取,主要内容包括:简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
5.5
论文数:
1.1W
被引数:
5.4W
机构
引用论文
Unraveling the Complexity of Catalytic Reactions via Kinetic Monte Carlo Simulation: Current Status and Frontiers通过动力学蒙特卡洛模拟解开催化反应的复杂性: 现状和前沿
ACS CATALYSIS
IF13.1
Geometry optimization using Gaussian process regression in internal coordinate systems在内部坐标系中使用高斯过程回归进行几何优化
Ab initiomolecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium 从头算 锗中液态-金属-非晶-半导体跃迁的分子动力学模拟
Ab initio instanton rate theory made efficient using Gaussian process regression
FARADAY DISCUSSIONS
IF3.1

