Room temperature optically pumped GeSn microdisk lasers

doi:10.1063/5.0074478

2022-02-02

PRE

DOI：10.1063/5.0074478

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摘要

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GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2% of Sn. We report a threshold of 3.27 MW cm(-2) at 305 K with peak emission at 353 meV. We ascribe these improvements to a higher tin concentration in the GeSn active layer with lower Sn content barriers on each side and to a better thermal dissipation provided by an adapted pedestal architecture beneath the GeSn micro-disk. This outcome is a major milestone for a fully integrated group-IV semiconductor laser on Si.

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PHOTODETECTORS

GAIN

期刊

Applied Physics Letters

IF:

3.6

论文数:

10.4W

被引数:

17.8W

机构

universite grenoble alpes (uga)

学者数:

2.1W

论文数: 1.5W

被引数: 23

communaute universite grenoble alpes

学者数:

3.5W

论文数: 2.7W

被引数: 29

CEA

学者数:

3.5W

论文数: 2.3W

被引数: 62

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