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Scanning X-Ray Diffraction Microscopy for Diamond Quantum Sensing

delete2021-11-16
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OA
AI
M
Mason C. Marshall *
D
David F. Phillips
M
Matthew Turner
M
Mark Ku
T
Tao Zhou
N
Nazar Delegan
F
F. Joseph Heremans
M
Martin V. Holt
R
Ronald L. Walsworth
DOI:10.1103/PhysRevApplied.16.054032delete
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摘要

摘要

En 中文
An understanding of nano- and microscale crystal strain in chemical-vapor-deposition diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization presents a challenge to diamond-based quantum sensing and information applications-as well as for future dark-matter detectors, where the directional information about incoming particles is encoded in crystal strain. Here, we exploit nanofocused scanning x-ray diffraction microscopy to quantitatively measure crystal deformation from defects in diamond with high spatial and strain resolution. The combination of information from multiple Bragg angles allows stereoscopic three-dimensional modeling of strain-feature geometry; the diffraction results are validated via comparison to optical measurements of the strain tensor based on spin-state-dependent spectroscopy of ensembles of nitrogen-vacancy centers in the diamond. Our results demonstrate both strain and spatial resolution sufficient for directional detection of dark matter via x-ray measurement of crystal strain and provide a promising tool for diamond growth analysis and improvement of defect-based sensing.
Keyword:
NITROGEN-VACANCY CENTERS
NANOSCALE
DISLOCATIONS
DEFECTS
STRAIN

期刊

Physical Review Applied 封面图
Physical Review Applied
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4.4
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7.1K
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Harvard University
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University of Delaware
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united states department of energy (doe)
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University System of Maryland
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引用论文

引用论文

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Nanoscale Hard X-Ray Microscopy Methods for Materials Studies
err2013-07-01
err151
PREAI
errHolt, Martin; Harder, Ross; Winarski, Robert; Rose, Volker
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