.png){kind=icon}
.png){kind=icon}
Return
Self-Powered Broadband Photodetector with Fast Photoresponse and Low Dark Current Based on Gr/MoTe2/NbSe2 Heterostructure
.png){kind=icon}
PRE
AI
Y
S
Z
C
Y
S
P
J
X
W
F
J
H
DOI：10.1002/lpor.202501819.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
The strong Fermi pinning effect at interfaces between bulk metallic electrodes and 2D semiconductors presents a significant challenge for developing high-performance 2D Schottky photodetectors with simultaneous fast response and high detectivity. Herein, we demonstrate a high-performance self-powered photodetector based on an all-2D van der Waals (vdW) heterojunction, utilizing metallic 2H-NbSe2 and graphene as vdW electrodes interfaced with semiconducting MoTe2. Leveraging Schottky barriers and a built-in electric field, the device achieves zero-bias operation with a rapid response speed (749 ns/313 ns), low dark current (∼2 × 10−13 A), a high detectivity of 1.14 × 1012 Jones, and broadband photodetection from visible to near-infrared (450–1064 nm). Moreover, the device has been successfully implemented in imaging systems and infrared optical communications, demonstrating its potential for practical applications. This work highlights the promising potential of the 2D vdW metallic electrodes to construct a high-performance Schottky heterojunction photodetector.
Keywords:
fast photoresponse
low dark current
NbSe2
self-powered photodetector
Journal
L
IF:
10
Papers:
3.7K
Citations:
2.1W
Organization
Cited Papers