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Semiconductor-Based Galvanic Isolation: Touch Current Suppression
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DOI：10.1109/TPEL.2019.2910596.png)
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Abstract
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This paper presents a comprehensive analysis of the generation mechanism and suppression methods of common-mode (CM) touch current when employing semiconductor-based galvanic isolation (SGI). SGI achieves galvanic isolation by utilizing semiconductor switches to deliver differential-mode (DM) power during their ON states while sustaining CM isolation voltage during their OFF states. In SGI converters, the touch current (TC) is generated as the switch output capacitance is charged by the CM voltage during each turn-ON transient. The TC rises as the switching frequency increases, which limits the system power density. This process is modeled by the proposed high-frequency pulse current model and the low-frequency equivalent resistance-based average model. Passive TC suppression approaches are reviewed, and an active TC compensation method has been proposed. A 2-kW EV battery chargerwith a GaN-based Totem-pole power factor correction stage and an SGI-based dc/dc stage has been built and tested. The touch current has been effectively reduced by 27 dB. It allows the converter to operate at a higher switching frequency to achieve higher power density while meeting the safety standards' touch current requirement.
Keywords:
Galvanic isolation
high power density
manufacturability
power converters
wide bandgap power devices
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