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En 中文
The successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices. We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.
Keyword:
bipolar power devices
power rectifiers
power thyristors
power transistors
silicon carbide
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