SILICON-BASED OPTOELECTRONICS

doi:10.1109/5.248958

1993-01-01

752

PRE

SOREF, RA

DOI：10.1109/5.248958

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摘要

En 中文

The decade of the 1990's is an opportune time for scientists and engineers to create cost-effective silicon ''superchips'' that merge silicon photonics with advanced silicon electronics on a silicon substrate. We can expect significant electrooptical devices from Column IV materials (Si, Ge, C, and Sn) for a host of applications. The best devices will use strained-layer epitaxy, doped heterostructures, and bandgap engineering of quantum-confined structures. This paper reviews Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic.

Keyword:

OPTICAL WAVE-GUIDES

1.3 MU-M

STRAINED-LAYER SUPERLATTICES

FREE-CARRIER ABSORPTION

SI-GE ALLOYS

LIGHT-MODULATOR

ON-INSULATOR

INTEGRATED-CIRCUITS

QUANTUM-WELLS

ROOM-TEMPERATURE

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期刊

Proceedings of the IEEE

IF:

25.9

论文数:

9.9K

被引数:

4.5W

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