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Silicon monolithic microchannel-cooled laser diode array

delete2000-07-03
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PRE
AI
J
J.A. Skidmore *
B
B.L. Freitas
J
J. Crawford
J
J. Satariano
E
E. Utterback
L
L. DiMercurio
K
K. Cutter
S
Steven B. Sutton
DOI:10.1063/1.126860delete
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摘要

摘要

En 中文
A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degrees C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm(2) is achieved cw at an emission wavelength of similar to 808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (C) 2000 American Institute of Physics. [S0003-6951(00)00827-5].
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期刊

Applied Physics Letters 封面图
Applied Physics Letters
IF:
3.6
论文数:
10.4W
被引数:
17.8W

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errJansen, M; Bournes, P; Corvini, P; Fang, F; Finander, M; Hmelar, M; Johnston, T; Jordan, C; Nabiev, R; Nightingale, J; Widman, M; Asonen, H; Aarik, J; Salokatve, A; Nappi, J; Rakennus, K
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