Silicon nanodot-array device with multiple gates

doi:10.1016/j.mssp.2008.12.001

Silicon nanodot-array device with multiple gates

2008-10-01

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DOI：10.1016/j.mssp.2008.12.001

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We fabricated a nanodot-array device with multiple input gates on a silicon-on-insulator (SOI) wafer by using a pattern-dependent oxidation method with multiple input gates, which embodies a new concept of a flexible single-electron device. Although the device can generate many logic functions owing to the capacitive coupling between dots and many gates, the complicated structural configuration makes it difficult to confirm the formation of the nanodot array. For further investigation of this kind of device to achieve higher functionality, it is important to demonstrate experimentally that the dot array is actually formed. We analyzed the oscillation-peak shift caused by the gate voltage change, and successfully determined the location of the dots that contributed to the experimentally observed oscillations. (C) 2008 Elsevier Ltd. All rights reserved.

Keyword:

Single electron

Nanodot array

Coulomb blockade

Silicon nanodot-array device with multiple gates

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