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Silicon nanotubes
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DOI：10.1002/1521-4095(20020903)14:17<1219::AID-ADMA1219>3.0.CO;2-T.png)
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摘要
En 中文
The preparation of silicon nanotubes (SiNTs) using nanochannel Al2O3 as a template and a chemical vapor deposition process is reported. The outer diameters of the SiNTs are around 60 nm with walls approximately 10 nm thick consisting of crystalline and amorphous silicon. A conceptual model is presented (see Figure) to account for the formation of SiNTs (right) as opposed to nanowires (left).
Keyword:
NANOWIRES
GROWTH
ROUTE
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