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摘要
En 中文
A compact single-electron memory cell has been fabricated in silicon using a process that is compatible with complementary metal-oxide-semiconductor circuit fabrication. The device is based on the Coulomb blockade effect observed in highly doped silicon nanowires. The circuit shows clear memory operation with a >100 mV gap between 0 and 1 levels when tested at a temperature of 4.2 K. The response of the circuit to write and erase pulse sequences is also presented. (C) 1998 American Institute of Physics. [S0003-6951(98)02041-5].
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期刊
IF:
3.6
论文数:
10.4W
被引数:
17.8W
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