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Simple Synthesis of Entropy Stabilized Oxides Single Crystal Films

delete2026-05-22
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OA
AI
A
Antoine Raison
N
Nathalie Prud’homme *
C
Christophe Racic
W
Wu Wang
D
Diana Dragoé
D
David Bérardan
N
Nita Dragoe *
DOI:10.1002/admi.70528delete
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Abstract

Abstract

En 中文
Entropy-stabilized oxides (ESO) have emerged in the last decade as a new class of metastable materials with promising functional properties. Here, we report a simple method for synthesizing single-crystalline ESO layers of the ESO (CoCuMgNiZn)O using metal–organic chemical vapor deposition (MOCVD) followed by thermal annealing. A multicationic oxide layer was first deposited on single-crystal MgO (100) substrates, and subsequent annealing steps at 700°C and 925°C promoted elemental interdiffusion and the formation of the entropy-stabilized phase, respectively. Grazing incidence x-ray diffraction, scanning electron microscope/energy dispersive spectroscopy, AFM, x-ray photoelectron spectroscopy, and atomic-resolution STEM analyses confirmed the structural evolution, chemical homogeneity, and unraveled their atomic structure. Our results demonstrate that entropy-stabilized single-crystal layers can be obtained by diffusion within the substrate, offering a straightforward approach for the integration of these compounds into functional devices. Moreover, atomic-resolution scanning transmission electron microscopy measurements showed that a transition toward an entropy-stabilized phase with spontaneous equimolar cationic composition takes place at high temperature. This is direct evidence of entropy stabilization observed at the atomic scale.
Keywords:
chemical vapor deposition
entropy-stabilized oxide
single crystal
thin film

Journal

Advanced Materials Interfaces cover
Advanced Materials Interfaces
IF:
4.4
Papers:
6.7K
Citations:
2.4W

Organization

U
université paris-saclay
Scholars:
2.2K
Papers: 898
Citations: 1