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Simulating surface diffusion and surface growth in ceramics

delete2004-01-01
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PRE
AI
M
M. Yu. Lavrentiev
H
Harris, DJ
J
John H. Harding
N
Neil L. Allan
J
John A. Purton
DOI:10.1039/b402741hdelete
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摘要

摘要

En 中文
We examine the movement of ion pairs on the surfaces of simple oxides. Using temperature-accelerated dynamics the elementary processes involved are identified and the activation energies of these used as input to kinetic Monte Carlo simulations. Results are presented for the motion of BaO and SrO ion pairs on the (100) surfaces of BaO and SrO, respectively, and the formation of island pairs on these surfaces is studied. The simulations reveal the importance of exchange mechanisms in surface diffusion and growth of oxides. The importance of such reactions has been recognised previously for metallic surfaces but not for ionic systems, where it has been assumed that ionic surface diffusion is surface diffusion via the hopping motion of ion pairs from one surface site to another. Exchange mechanisms can dominate transport processes both on terraces and steps for both homoepitaxial and heteroepitaxial growth. We suggest the unavoidable mixing when an exchange mechanism operates must be considered when attempting to grow sharp interfaces in oxide nanostructures.
Keyword:
ATOMISTIC SIMULATION
TIME-SCALE
DYNAMICS
ATOMS
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Dalton Transactions 封面图
Dalton Transactions
IF:
3.3
论文数:
3.3W
被引数:
7.5W

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