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Sine-Transform-Based Memristive Hyperchaotic Model With Hardware Implementation
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DOI：10.1109/TII.2022.3157296.png)
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摘要
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Memristor is a special nonlinear circuit component with internal state and can lead to excellent chaos complexity in its constructed discrete system. To enhance the chaos complexity of a memristor-based discrete system, this article proposes a 2-D sine-transform-based (STB) memristive model. The model has line fixed point and its stability is dependent on memristor initial state. Complex dynamics with quasi-periodic bifurcation and multistability are demonstrated using numerical methods. For different control parameters, chaotic and hyperchaotic attractors are emerged and their complicated fractal structures and outstanding performance indicators are exhibited. A hardware prototype is developed and these attractors are experimentally captured therein. Besides, six pseudorandom number generators (PRNGs) are designed using the proposed model under different control parameters and the test results by the TestU01 standard show that these PRNGs have high randomness without chaos degradation. In brief, the proposed 2-D STB memristive model is flexible to generate chaos and hyperchaos with high performance.
Keyword:
Memristors
Mathematical models
Chaotic communication
Bifurcation
Degradation
Computational modeling
Stability analysis
Chaos
chaos degradation
control parameter
hyperchaos
line fixed point
memristor
pseudorandom number generator (PRNG)
sine transform
期刊
IF:
9.9
论文数:
8.6K
被引数:
6.0W
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