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Single-parameter quantized charge pumping in high magnetic fields
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DOI：10.1063/1.3063128.png)
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We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.
Keyword:
aluminium alloys
electron spin polarisation
gallium arsenide
magnetic field effects
semiconductor quantum dots
期刊
IF:
3.6
论文数:
10.4W
被引数:
17.8W
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分享收藏分享收藏Enhanced current quantization in high-frequency electron pumps in a perpendicular magnetic field.png)
PHYSICAL REVIEW B
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PHYSICAL REVIEW BIF3.7
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