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Sintering Atmosphere Effects on Green-Synthesized CeO2 NPs: A Microstructural and Electrical Investigation

delete2026-03-01
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PRE
AI
M
Maji, Subhadip
R
Raj Kumar
V
Vaishnavi Pingle
V
Vishwajeet
V
V. K. Gupta
S
Sonkar, Piyush K.
N
Nidhi Mani Tripathi
U
Upendra Kumar *
DOI:10.1007/s11664-026-12771-8delete
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Abstract

Abstract

En 中文
This study investigates the structural and electrical evolution of cerium dioxide (CeO2) nanoparticles synthesized via an Aloe vera-mediated green route. The impact of post-synthesis thermal processing was evaluated by comparing samples sintered in ambient air (CAM) versus vacuum (CAV). While x-ray diffraction and Rietveld refinement confirmed a single-phase cubic fluorite structure for all samples, vacuum sintering significantly modified the electronic landscape. The CAV sample exhibited superior AC conductivity (-1.809 S cm-1) compared to the CAM sample (-2.004 S cm-1) at 400 degrees C. X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) calculations attribute this enhancement to reduced oxygen partial pressure, which promotes the formation of oxygen vacancies (Vo center dot center dot\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$V_{o}<^>{ \bullet \bullet }$$\end{document}) and Ce3+ polarons. Charge transport analysis indicates a transition from small polaron tunneling (SPT) to correlated barrier hopping (CBH) above 150 degrees C. The electric modulus formalism also showed that the relaxation process is thermally activated and follows the time-temperature superposition principle (TTSP). These findings demonstrate that vacuum sintering is a critical lever for optimizing charge-carrier density in eco-friendly CeO2, making it a viable candidate for IT-SOFCs and sensor applications.
Keywords:
Green synthesis
DFT
Rietveld refinement
AC conduction
correlated barrier hopping (CBH)
TTSP

Journal

J
JOURNAL OF ELECTRONIC MATERIALS
IF:
2.5
Papers:
485
Citations:
0

Organization

Motilal Nehru National Institute of Technology cover
Motilal Nehru National Institute of Technology
Scholars:
703
Papers: 716
Citations: 1.7K
N
national institute of technology (nit system)
Scholars:
3.9W
Papers: 3.7W
Citations: 31
I
Indian Institute of Information Technology Allahabad
Scholars:
811
Papers: 612
Citations: 833
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