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Solid phase immiscibility in GaInN
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DOI：10.1063/1.117683.png)
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摘要
En 中文
The large difference in interatomic spacing between GaN and InN is found to give rise to a solid phase miscibility gap. The temperature dependence of the binodal and spinodal lines in the Ga1-xInxN system was calculated using a modified valence-force-field model where the lattice is allowed to relax beyond the first nearest neighbor. The strain energy is found to decrease until approximately the sixth nearest neighbor, but this approximation is suitable only in the dilute limit. Assuming a symmetric, regular-solutionlike composition dependence of the enthalpy of mixing yields an interaction parameter of 5.98 kcal/mole. At a typical growth temperature of 800 degrees C, the solubility of In in GaN is calculated to be less than 6%. The miscibility gap is expected to represent a significant problem for the epitaxial growth of these alloys. (C) 1996 American Institute of Physics.
Keyword:
SEMICONDUCTORS
INGAN
GAP
