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Solution-processable ordered defect compound semiconductors for high-performance electronics
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DOI：10.1126/sciadv.adr8636.png)
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摘要
En 中文
Solution-processable semiconductors hold promise in enabling applications requiring cost-effective electronics at scale but suffer from low performance limited by defects. We show that ordered defect compound semiconductor CuIn5Se8, which forms regular defect complexes with defect-pair compensation, can simultaneously achieve high performance and solution processability. CuIn5Se8 transistors exhibit defect-tolerant, band-like transport supplying an output current above 35 microamperes per micrometer, with a large on/off ratio greater than 10(6), a small subthreshold swing of 189 +/- 21 millivolts per decade, and a high field-effect mobility of 58 +/- 10 square centimeters per volt per second, with excellent uniformity and stability, superior to devices built on its less defective parent compound CuInSe2, analogous binary compound In2Se3, and other solution-deposited semiconductors. They can be monolithically integrated with carbon nanotube transistors to form high-speed and low-voltage three-dimensional complementary logic circuits and with micro-light-emitting diodes to realize high-resolution displays.
Keyword:
THIN-FILM TRANSISTORS
TOTAL-ENERGY CALCULATIONS
METAL
CIRCUITS
MOBILITY
CUINSE2
FABRICATION
DEPENDENCE
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期刊
IF:
12.5
论文数:
2.1W
被引数:
23.3W
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