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Solution-processed carbon nanotube thin-film complementary static random access memory
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DOI：10.1038/NNANO.2015.197.png)
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摘要
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Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties(1-3), making them one of the most promising candidates for solution-processable, high-performance integrated circuits(4,5). In particular, advances in the enrichment of high-purity semiconducting SWCNTs6-8 have enabled recent circuit demonstrations including synchronous digital logic(9), flexible electronics(10-14) and high-frequency applications(15). However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors(16-18), the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality(19-21). Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.
Keyword:
FIELD-EFFECT TRANSISTORS
INTEGRATED-CIRCUITS
THRESHOLD VOLTAGE
RING OSCILLATORS
ELECTRONICS
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